ST STB7N52K3

ST · FETs & Power MOSFETs · MPN STB7N52K3

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Specifications

Drain to Source Voltage525V
Gate Charge(Qg)34nC@10V
Current - Continuous Drain(Id)6A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation90W
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

525V 6A 4.5V 90W 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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