ST STB75NF75T4

ST · FETs & Power MOSFETs · MPN STB75NF75T4

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Specifications

Gate Charge(Qg)160nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)730pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.7nF
TypeN-Channel

Technical details

75V 80A 4V 300W 11mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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