ST STB6NK60ZT4

ST · FETs & Power MOSFETs · MPN STB6NK60ZT4

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)905pF
TypeN-Channel

Technical details

N-Channel 600V 9A 110W Surface Mount D2PAK

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