ST · FETs & Power MOSFETs · MPN STB60NF06T4
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| Gate Charge(Qg) | 66nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 360pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF |
| RDS(on) | 16mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.81nF |
| Type | N-Channel |
60V 60A 4V 110W 16mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS