ST STB60NF06LT4

ST · FETs & Power MOSFETs · MPN STB60NF06LT4

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Specifications

Gate Charge(Qg)30nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)60A
Operating Temperature --65℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)125pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

N-Channel 60V 60A 110W Surface Mount D2PAK

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