ST STB5N80K

ST · FETs & Power MOSFETs · MPN STB5N80K

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)5nC@640V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)0.3pF
Number1 N-channel
Input Capacitance(Ciss)177pF

Technical details

800V 4A 4V 60W 1 N-channel Single FETs, MOSFETs RoHS

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