ST · FETs & Power MOSFETs · MPN STB5N80K
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 5nC@640V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 177pF |
800V 4A 4V 60W 1 N-channel Single FETs, MOSFETs RoHS