ST STB55NF06T4

ST · FETs & Power MOSFETs · MPN STB55NF06T4

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation110W
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF

Technical details

N-Channel 60V 50A 110W Surface Mount D2PAK

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