ST · FETs & Power MOSFETs · MPN STB50N65DM6
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| Gate Charge(Qg) | 52.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 165pF |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 91mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.3nF |
| Type | N-Channel |
650V 33A 4.75V 250W 91mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS