ST · FETs & Power MOSFETs · MPN STB4NK60Z-1
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| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 70W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 510pF |
| Type | N-Channel |
600V 4A 4.5V 70W 2Ω@10V 1 N-channel N-Channel I2PAK Single FETs, MOSFETs RoHS