ST STB47N60DM6AG

ST · FETs & Power MOSFETs · MPN STB47N60DM6AG

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)36A
Output Capacitance(Coss)160pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.35nF
TypeN-Channel

Technical details

N-Channel 600V 36A 250W Surface Mount D2PAK(TO-263)

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