ST · FETs & Power MOSFETs · MPN STB47N50DM6AG
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF |
| RDS(on) | 61mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.3nF |
500V 38A 3V 250W 61mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS