ST · FETs & Power MOSFETs · MPN STB45N65M5
No reviews yet — be the first to review ST STB45N65M5.
| Gate Charge(Qg) | 82nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 210W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 78mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.47nF |
N-Channel 650V 35A 210W Surface Mount D2PAK