ST STB45N40DM2AG

ST · FETs & Power MOSFETs · MPN STB45N40DM2AG

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Specifications

Gate Charge(Qg)56nC@10V
Drain to Source Voltage400V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)38A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)3.5pF
RDS(on)72mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.6nF
TypeN-Channel

Technical details

N-Channel 400V 38A 250W Surface Mount D2PAK

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