ST STB45N30M5

ST · FETs & Power MOSFETs · MPN STB45N30M5

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Specifications

Gate Charge(Qg)95nC@240V
Drain to Source Voltage300V
Current - Continuous Drain(Id)53A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)9.5pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.24nF

Technical details

300V 53A 3V 250W 40mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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