ST · FETs & Power MOSFETs · MPN STB43N60DM2
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| Gate Charge(Qg) | 56nC@10V |
|---|---|
| Configuration | Half-Bridge |
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 34A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 85mΩ@10V |
| Input Capacitance(Ciss) | 2.5nF |
600V 34A 3V 250W 85mΩ@10V D2PAK Single FETs, MOSFETs RoHS