ST · FETs & Power MOSFETs · MPN STB42N60M2-EP
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 34A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | 87mΩ@10V |
| Input Capacitance(Ciss) | 2.37nF |
650V 34A 3V 250W 87mΩ@10V D2PAK Single FETs, MOSFETs RoHS