ST STB41N40DM6AG

ST · FETs & Power MOSFETs · MPN STB41N40DM6AG

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Specifications

Gate Charge(Qg)53nC@10V
Drain to Source Voltage400V
Output Capacitance(Coss)151pF
Current - Continuous Drain(Id)41A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.31nF
TypeN-Channel

Technical details

400V 41A 5V 250W 65mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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