ST STB40NF10LT4

ST · FETs & Power MOSFETs · MPN STB40NF10LT4

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Specifications

Gate Charge(Qg)64nC@80V
Drain to Source Voltage100V
Current - Continuous Drain(Id)40A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)125pF
RDS(on)33mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.3nF

Technical details

N-Channel 100V 40A 150W Surface Mount D2PAK

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