ST STB40N60M2

ST · FETs & Power MOSFETs · MPN STB40N60M2

No reviews yet — be the first to review ST STB40N60M2.

Specifications

Drain to Source Voltage600V
Gate Charge(Qg)57nC@10V
Output Capacitance(Coss)117pF
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)2.4pF
RDS(on)88mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

N-Channel 600V 34A 250W Surface Mount D2PAK(TO-263)

Related FETs & Power MOSFETs