ST · FETs & Power MOSFETs · MPN STB38N65M5
No reviews yet — be the first to review ST STB38N65M5.
| Gate Charge(Qg) | 71nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 30A |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 190W |
| RDS(on) | 95mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
650V 30A 5V 190W 95mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS