ST · FETs & Power MOSFETs · MPN STB36NM60ND
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 80.4nC@10V |
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 97mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.785nF |
600V 29A 3V 190W 97mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS