ST STB36NF06LT4

ST · FETs & Power MOSFETs · MPN STB36NF06LT4

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Specifications

Gate Charge(Qg)17nC@5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation70W
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)660pF

Technical details

60V 30A 2.5V 70W 40mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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