ST · FETs & Power MOSFETs · MPN STB36N60M6
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 44.3nC@10V |
| Output Capacitance(Coss) | 93pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 99mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.96nF |
| Type | N-Channel |
600V 30A 4.75V 208W 99mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS