ST · FETs & Power MOSFETs · MPN STB35NF10T4
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 220pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| RDS(on) | 35mΩ@10V |
| Input Capacitance(Ciss) | 1.55nF |
| Type | N-Channel |
100V 40A 4V 115W 35mΩ@10V N-Channel D2PAK Single FETs, MOSFETs RoHS