ST · FETs & Power MOSFETs · MPN STB35N65DM2
No reviews yet — be the first to review ST STB35N65DM2.
| Gate Charge(Qg) | 56.3nC@520V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | 93mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.54nF |
N-Channel 650V 32A 250W Surface Mount D2PAK