ST · FETs & Power MOSFETs · MPN STB35N60DM2
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 54nC@10V |
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 210W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF |
| RDS(on) | 94mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.4nF |
600V 28A 3V 210W 94mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS