ST STB34NM60ND

ST · FETs & Power MOSFETs · MPN STB34NM60ND

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)80.4nC@10V
Current - Continuous Drain(Id)29A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation190W
RDS(on)110mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.785nF
TypeN-Channel

Technical details

N-Channel 600V 29A 190W Surface Mount TO-263

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