ST · FETs & Power MOSFETs · MPN STB34NM60ND
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 80.4nC@10V |
| Current - Continuous Drain(Id) | 29A |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 190W |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.785nF |
| Type | N-Channel |
N-Channel 600V 29A 190W Surface Mount TO-263