ST · FETs & Power MOSFETs · MPN STB34NM60N
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 84nC@10V |
| Current - Continuous Drain(Id) | 29A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 105mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.722nF |
600V 29A 4V 250W 105mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS