ST · FETs & Power MOSFETs · MPN STB33N65M2
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| Gate Charge(Qg) | 41.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 24A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 190W |
| RDS(on) | 140mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.79nF |
| Type | N-Channel |
N-Channel 650V 24A 190W Surface Mount TO-263-3(D2PAK)