ST · FETs & Power MOSFETs · MPN STB33N60M2
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 45.5nC@10V |
| Output Capacitance(Coss) | 85pF |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.781nF |
| Type | N-Channel |
600V 26A 4V 190W 125mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS