ST · FETs & Power MOSFETs · MPN STB32NM50N
No reviews yet — be the first to review ST STB32NM50N.
| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 62.5nC@10V |
| Output Capacitance(Coss) | 179pF |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 9.7pF |
| RDS(on) | 130mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.973nF |
| Type | N-Channel |
N-Channel 500V 22A 190W D2PK