ST STB32N65M5

ST · FETs & Power MOSFETs · MPN STB32N65M5

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)72nC@10V
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)119mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.32nF
TypeN-Channel

Technical details

N-Channel 650V 24A 150W Surface Mount D2PAK

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