ST STB31N65M5

ST · FETs & Power MOSFETs · MPN STB31N65M5

No reviews yet — be the first to review ST STB31N65M5.

Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage-
Current - Continuous Drain(Id)22A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)4.2pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)1.865nF

Technical details

22A 5V 150W 1 N-channel D2PAK Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs