ST STB30NF20

ST · FETs & Power MOSFETs · MPN STB30NF20

No reviews yet — be the first to review ST STB30NF20.

Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)43pF
RDS(on)75mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.597nF
TypeN-Channel

Technical details

200V 30A 4V 125W 75mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs