ST · FETs & Power MOSFETs · MPN STB30NF10T4
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 45mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.18nF |
| Type | N-Channel |
100V 35A 4V 115W 45mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS