ST STB30N80K5

ST · FETs & Power MOSFETs · MPN STB30N80K5

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)43nC@10V
Output Capacitance(Coss)145pF
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.53nF
TypeN-Channel

Technical details

800V 24A 5V 250W 180mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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