ST STB30N65M5

ST · FETs & Power MOSFETs · MPN STB30N65M5

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Specifications

Gate Charge(Qg)64nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)22A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)139mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.88nF
TypeN-Channel

Technical details

650V 22A 5V 140W 139mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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