ST · FETs & Power MOSFETs · MPN STB30N65M2AG
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 30.8nC |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.44nF |
| Type | N-Channel |
N-Channel 650V 20A 190W Surface Mount D2PAK(TO-263)