ST · FETs & Power MOSFETs · MPN STB28NM60ND
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| Drain to Source Voltage | - |
|---|---|
| Gate Charge(Qg) | 62.5nC@10V |
| Current - Continuous Drain(Id) | 23A |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 190W |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.09nF |
23A 190W 150mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS