ST STB28NM50N

ST · FETs & Power MOSFETs · MPN STB28NM50N

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)122pF
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)4.3pF
RDS(on)158mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.735nF
TypeN-Channel

Technical details

N-Channel 500V 21A 150W Surface Mount D2PAK

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