ST · FETs & Power MOSFETs · MPN STB28N60M2
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 170W |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.44nF |
600V 22A 4V 170W 150mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS