ST · FETs & Power MOSFETs · MPN STB26NM60N
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 60nC@480V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 140W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 165mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
| Type | N-Channel |
600V 20A 4V 140W 165mΩ@10V 1 N-channel N-Channel TO-263-3(D2PAK) Single FETs, MOSFETs RoHS