ST STB25N80K5

ST · FETs & Power MOSFETs · MPN STB25N80K5

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)19.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)260mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.6nF
TypeN-Channel

Technical details

N-Channel 800V 19.5A 250W Surface Mount TO-263

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