ST · FETs & Power MOSFETs · MPN STB24N60M6
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| Gate Charge(Qg) | 23nC@480V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.25V |
| Pd - Power Dissipation | 130W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF |
| RDS(on) | 162mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 960pF |
N-Channel 600V 17A 130W Surface Mount D2PAK