ST · FETs & Power MOSFETs · MPN STB23NM60ND
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| Gate Charge(Qg) | 54.6nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 21A |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 175mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
600V 21A 5V 190W 175mΩ@10V N-Channel D2PAK Single FETs, MOSFETs RoHS