ST STB23NM50N

ST · FETs & Power MOSFETs · MPN STB23NM50N

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)17A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.33nF
TypeN-Channel

Technical details

N-Channel 500V 17A 125W Surface Mount TO-263-3(D2PAK)

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