ST · FETs & Power MOSFETs · MPN STB21N65M5
No reviews yet — be the first to review ST STB21N65M5.
| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 46pF |
| Current - Continuous Drain(Id) | 17A |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 179mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.95nF |
| Type | N-Channel |
650V 17A 5V 125W 179mΩ 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS