ST · FETs & Power MOSFETs · MPN STB20NM60D
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| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 500pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -65℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 192W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 290mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
| Type | N-Channel |
600V 20A 5V 192W 290mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS