ST STB20NM50T4

ST · FETs & Power MOSFETs · MPN STB20NM50T4

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)56nC@10V
Output Capacitance(Coss)285pF
Current - Continuous Drain(Id)20A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation192W
Reverse Transfer Capacitance (Crss@Vds)34pF
RDS(on)250mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.48nF
TypeN-Channel

Technical details

N-Channel 500V 20A 192W Surface Mount TO-263

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