ST · FETs & Power MOSFETs · MPN STB20N65M5
No reviews yet — be the first to review ST STB20N65M5.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 36nC@520V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 130W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.434nF |
650V 18A 3V 130W 160mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS